SELF-ALIGNED ORGANIC FIELD EFFECT TRANSISTORS AND MANUFACTURING METHOD THE SAME

摘要

A self-aligned organic FET(field effect transistor) is provided to reduce parasitic capacitance by using a photosensitive polymer thin film as a gate electrode and by preventing a gate electrode from overlapping a source/drain electrode. A gate electrode is formed on a substrate(201) by using a photosensitive polymer thin film. A gate insulation layer(203) is formed on the substrate and the gate electrode. A source electrode(206) and a drain electrode(207) are formed on the gate insulation layer at both sides of a channel region in a manner that doesn't overlap the gate electrode. An organic semiconductor layer is formed on the gate insulation layer in the channel region. The gate insulation layer can be made of an organic or inorganic material with transparency. A transparent electrode can be used as the source electrode and the drain electrode.