| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which minute defects in itself or in its electrodes can be detected in a stage before a substrate attachment process is carried out and to provide its inspection method. <P>SOLUTION: The unit cells 10 of a diode device 100 are each equipped with a p-type semiconductor region 1, an n-type semiconductor region 2, an anode electrode 11, and a cathode electrode 21. The surface of the anode electrode 11 serves as an anode electrode pad 15 used for wire bonding or soldering. An insulation breakdown detecting electrode 31 coated with an insulating film 3 is built in the anode electrode 11. The insulation breakdown detection electrode 31 is located below the pad surface of the anode electrode pad 15. In a minute defect inspection process, an inspection bias voltage is applied between the anode electrode 11 and the insulation breakdown detecting electrode 31. <P>COPYRIGHT: (C)2008,JPO&INPIT |
