| 摘要 |
PROBLEM TO BE SOLVED: To prevent such a phenomenon that a metallic silicide is extruded on the side of a semiconductor substrate, and also to achieve compatibility among the increased MOSFET driving force, reduced parasitic resistance, and suppression of generation of a junction leakage failure. SOLUTION: A semiconductor device comprises an element isolation insulating film 11 provided so as to surround an element formation region of a semiconductor substrate 10 made of silicon as its main component, the film 11 being made of silicon oxide as its main component; a gate electrode 13 formed on the element formation region via a gate insulating film 12; a diffusion layer 16 formed in the semiconductor substrate 10 to sandwich a channel region under the gate electrode 13; semiconductor regions 21, 23 which is made of a material having a lattice constant different from that of silicon, have the same conduction type as the diffusion layer 16, and are formed to sandwich the channel region and the diffusion layer 16; a silicon nitride film 22 formed between the semiconductor region 16 and the element isolation insulating film 11 on the side of the element isolation insulating film 11 and in the upper side of the lowest part of the semiconductor region 21; and a conductive film 25 formed on the surface of the semiconductor region 23. COPYRIGHT: (C)2008,JPO&INPIT
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