发明名称 |
Selective anisotropic wet etching of workfunction metal for semiconductor devices |
摘要 |
Embodiments of an apparatus and methods for providing a workfunction metal gate electrode on a substrate with doped metal oxide semiconductor structures are generally described herein. Other embodiments may be described and claimed.
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申请公布号 |
US2008073723(A1) |
申请公布日期 |
2008.03.27 |
申请号 |
US20060525765 |
申请日期 |
2006.09.22 |
申请人 |
RACHMADY WILLY;SHAH UDAY;KAVALIEROS JACK T;DOYLE BRIAN S |
发明人 |
RACHMADY WILLY;SHAH UDAY;KAVALIEROS JACK T.;DOYLE BRIAN S. |
分类号 |
H01L29/78;H01L21/8234 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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