发明名称 THREE-DIMENSIONAL STRUCTURE FORMED BY THIN SILICON WIRES, METHOD OF PRODUCTION OF THE STRUCTURE AND DEVICE ON BASE OF IT
摘要 FIELD: measuring technique. ^ SUBSTANCE: three-dimensional structure and method of its production can be applied to scanning probe microscope, oscillations measuring devices, surface and border surface analyzer of electric circuit, mass detector, electric circuit network, filter for gripping material an so on and it can be used for measurement of temperature, determination of temperature distribution in electron devices and temperature distribution and metabolism in biological matters. Three-dimensional structure is formed by high-reliable super-thin silicon wires having size of 1 nanometer to several micrometers, formed by wet etching by usage of crystal structure of single-crystal material. Two wires form one thin coil. ^ EFFECT: improved reliability of measurements. ^ 29 cl, 31 dwg
申请公布号 RU2320976(C2) 申请公布日期 2008.03.27
申请号 RU20040139083 申请日期 2003.06.02
申请人 DZHAPAN SAJENS EHND TEKNOLODZHI EHJDZHENSI 发明人 KAVAKATSU KHIDEKI;KOBAJASI DAJ
分类号 G01G3/16;B01J20/28;B81B1/00;B81C1/00;B82B1/00;B82B3/00;G01K7/16;G01L1/10;G01N1/00;G01Q30/10;G01Q30/20;G01Q60/24;G01Q60/38;G01Q60/54;G01R33/02 主分类号 G01G3/16
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