| 摘要 |
PROBLEM TO BE SOLVED: To provide a heating device capable of increasing the temperature-rising rate of a semiconductor wafer by suppressing heat radiation from a glass type carbon heating element to the outside of a reaction vessel when raising the temperature of the semiconductor wafer and of increasing the temperature-reducing rate of the semiconductor wafer by releasing the heat radiation suppression state when reducing the temperature of the semiconductor wafer after terminating energizing a high frequency induction coil in a heating process of the semiconductor wafer by causing the glass type carbon heating element to generate heat by induction. SOLUTION: The heating device includes a reaction vessel 1 in which a semiconductor wafer W is accommodated, a glass type carbon heating element 2 arranged in the reaction vessel 1 and heating the semiconductor wafer W, a high frequency induction coil 3 arranged outside the reaction vessel 1 and causing the glass type carbon heating element 2 to generate heat by induction, and a movable heat reflecting plate 4 arranged between the reaction vessel 1 and the high frequency induction coil 3 and configured so that the states in opposition to the glass type carbon heating element 2 can be made differ between when the high frequency induction coil 3 is being energized and when the energizing is terminated. COPYRIGHT: (C)2008,JPO&INPIT
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