| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which an increase in interface resistance caused by the natural oxidation of a high melting point silicide layer can be prevented while relaxing restrictions on a manufacturing process. SOLUTION: A gate electrode 14 in the semiconductor device 10 has a polycrystal silicon layer 15, a tungsten-silicide layer 16, a tungsten-nitride layer 17 and a tungsten layer 18 sequentially from a silicon substrate 11 side. Phosphorous is doped in the polysilicon layer 15, and nitrogen is doped in the tungsten-silicide layer 16. COPYRIGHT: (C)2008,JPO&INPIT
|
