| 发明名称 |
MASK PATTERN FOR SEMICONDUCTOR DEVICE FABRICATION, METHOD OF FORMING THE SAME, METHOD FOR PREPARING COATING, COMPOSITION FOR FINE PATTERN FORMATION, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.
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| 申请公布号 |
US2008076255(A1) |
申请公布日期 |
2008.03.27 |
| 申请号 |
US20070949443 |
申请日期 |
2007.12.03 |
| 申请人 |
HATA MITSUHIRO;HAH JUNG-HWAN;KIM HYUN-WOO;WOO SANG-GYUN |
发明人 |
HATA MITSUHIRO;HAH JUNG-HWAN;KIM HYUN-WOO;WOO SANG-GYUN |
| 分类号 |
G03F1/00;G03F7/40;G03F9/00;H01L21/027;H01L21/311 |
主分类号 |
G03F1/00 |
| 代理机构 |
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| 主权项 |
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