| 摘要 |
<p>A method for fabricating a semiconductor device is provided to reform the surface of a lower layer of a photoresist pattern and improve adhesion by performing a plasma treatment after a defective photoresist pattern is removed. A photoresist pattern is formed on a semiconductor substrate(S1). Whether the photoresist pattern is defective is inspected(S2). If the photoresist pattern is defective, the defective photoresist pattern is removed(S4). A plasma treatment is performed on the semiconductor substrate(S5). An inductively coupled plasma generating apparatus can be used in the plasma treatment wherein an upper electrode is used after a lower electrode installed in a vacuum chamber is operated for 3~5 seconds to stabilize plasma. A photoresist pattern can be formed again on the plasma-treated semiconductor substrate(S6).</p> |
