发明名称 SPUTTERING TARGET, INTERFACE FILM FOR PHASE CHANGE OPTICAL RECORDING MEDIUM USING SAME, MANUFACTURING METHOD THEREOF, AND PHASE CHANGE OPTICAL RECORDING MEDIUM
摘要 <P>PROBLEM TO BE SOLVED: To enable deposition of metal compound which has crystallization promoting function, optical characteristic, and adhesion to a recording medium for a sputtering target used for deposition of interface film of phase change recording medium. <P>SOLUTION: The sputtering target has such a composition as described ((M<SB>1-a</SB>Si<SB>a</SB>)<SB>1-b</SB>Cr<SB>b</SB>)(O<SB>1-x</SB>N<SB>x</SB>)<SB>z</SB>(in the equation, M means at least one element chosen from Zr and Hf, and a, b, x, and z are numbers which meet the following equations: 0.1&le;a&le;0.6, 0.1&le;b&le;0.5, 0<x&le;0.7, and 0.5&le;z&le;2.0 (atom ratio)), and a metal acid nitride film deposited by using the sputtering target is used for interface film 4 and 6 of the phase change recording medium 1. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008071424(A) 申请公布日期 2008.03.27
申请号 JP20060249554 申请日期 2006.09.14
申请人 TOSHIBA CORP;TOSHIBA MATERIALS CO LTD 发明人 SAKAMOTO TOSHIYA;KOSAKA YASUO;NITTA AKIHISA
分类号 G11B7/26;G11B7/254;G11B7/257 主分类号 G11B7/26
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