| 摘要 |
PROBLEM TO BE SOLVED: To accomplish functioning as a sidewall spacer, and to transfer the stress of a stress film to a channel region effectively. SOLUTION: A semiconductor device comprises: a semiconductor region 11; a gate electrode 13 formed on the semiconductor region 11 via a gate insulation film 12; extension regions 14, 15 formed at the semiconductor region 11 at both sides of the gate electrode 13; source/drain regions 16, 17 formed via the extension regions 14, 15; an insulation film 24 for covering the sidewall of the gate electrode 13 and the extension regions 14, 15; and stress films 31 for covering the semiconductor region 11 and apply stress to the semiconductor region 11 at the lower portion of the gate electrode 13. The insulation film 24 is formed of at least the lowermost layer where at least one portion of the sidewall insulation film made of a plurality of layers formed on the sidewall of the gate electrode 13 is removed when forming the source/drain regions 16, 17. COPYRIGHT: (C)2008,JPO&INPIT
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