| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing source inductance in the semiconductor device using a nitride semiconductor, and to provide a manufacturing method of the semiconductor device. SOLUTION: The semiconductor device comprises: a substrate 1 made of a compound semiconductor; a semiconductor layer 2 that is formed on the front of the substrate 1 and is made of a nitride semiconductor differing from the substrate 1; a via hole 6 reaching the semiconductor layer 2 from the rear side of the substrate 1; a ground electrode 7 formed on the inner wall of the via hole 6; a contact layer 8 reaching the ground electrode 7 from the front of the semiconductor layer 2; and a gate electrode 3, a drain electrode 5, and a source electrode 4 connected to the ground electrode 7 via the contact layer 8 formed on the semiconductor layer 2 each. COPYRIGHT: (C)2008,JPO&INPIT
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