发明名称 MOS SOLID-STATE IMAGE SENSING DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce noise by reducing a capacity of a floating diffusion part in a pixel structure including in common a reset transistor and an amplifying transistor at a plurality of pixels. SOLUTION: In the pixel region where pixels are arranged in the shape of a matrix, photodiodes, floating diffusion parts, transfer transistors, amplifying transistors, and reset transistors are provided. The pixel region is constituted of a plurality of sets of pixels each of which is formed of n (n: even number) pixels provided adjacently in the row or column direction. Each set is provided with one reset transistor and one amplifying transistor in common to n pixels and can be electrically connected with n floating diffusion parts of n pixels. Among the adjacent floating diffusion parts, the predetermined element isolation structure is provided to isolate each floating diffusion part for independence thereof. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008071822(A) 申请公布日期 2008.03.27
申请号 JP20060247064 申请日期 2006.09.12
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OTA SOGO
分类号 H01L27/146;H04N5/335;H04N5/357;H04N5/369;H04N5/374;H04N5/3745;H04N5/376 主分类号 H01L27/146
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