| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which ensures the connectivity of flip-chip mounting corresponding to lead (Pb)-free and the low rigidity of an interlayer insulation film as well as high reliability of the bonding part. SOLUTION: The method of manufacturing a semiconductor device includes a step to form a first bump electrode 8 on the first electrode 6 of a first substrate 2, a step to form a second bump electrode 11 on the second electrode 10 of a second substrate 3 that has a lower melting point than the first bump electrode 8, a step to make the first and second substrates 2 and 3 face each other and to arrange the first and second bump electrodes 8 and 11, a step to put in an under fill 12 between the first and second substrates 2 and 3 and cure it, and a step to melt the first and second bump electrodes 8 and 11 at higher temperature than the melting point of the first bump electrode 8 and to form a third bump electrode 13 that has an intermediate melting point between the melting point of the first bump electrode 8 and that of the second bump electrode 11. COPYRIGHT: (C)2008,JPO&INPIT
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