| 摘要 |
Embodiments of the present invention are directed to a substrate for performing ionization desorption on porous silicon, methods for performing such ionization desorption and methods of making substrates. One embodiment directed to a substrate for performing ionization desorption on silicon comprises a substrate having a surface having a formula of: As used above, X is H or Y, where at least at least twenty five mole percent of X is Y and Y is hydroxyl, or -O-R<SUB>1</SUB>, or O-SiR<SUB>1</SUB>, R<SUB>2</SUB>, R<SUB>3 </SUB>wherein R<SUB>1</SUB>, R<SUB>2</SUB>, and R<SUB>3 </SUB>are selected from the group consisting of alkyl, alkenyl, alkynyl, aromatic, amino alkyl, amino alkenyl, amino alkynyl, pyridinyl, pyrridonyl, and carbonyl, alcohol and carboxylic acid derivatives thereof having one to twenty five atoms, and hydroxyl, amino, amide, carboxyl, ester, carbonyl, sulfhydryl, sulfonyl, phosphoral, bromo, iodo, chloro and fluoro derivatives. The letter "n" represents an integer from 1 to infinity and any vacant valences are silicon atoms, hydrogen or impurities.
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