发明名称 Read operation of multi-port memory device
摘要 A multi-port memory device includes a plurality of ports, a plurality of bank control units, a plurality of banks, a read clock generation unit, and a data transmission unit. Each of the banks is connected to a corresponding one of the bank control units. The read clock generation unit generates a read clock toggling for four clocks in response to a read command. The data transmission unit transmits a read data from the banks to a corresponding one of the ports in response to the read clock. Every bank control unit is connected to all of the ports.
申请公布号 US2008074936(A1) 申请公布日期 2008.03.27
申请号 US20070903170 申请日期 2007.09.20
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM JAE-IL;DO CHANG-HO;CHUNG JIN-IL;IM JAE-HYUK
分类号 G11C7/00;G11C8/00 主分类号 G11C7/00
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