发明名称 |
EXPOSURE AND PATTERNING PROCESS FOR FORMING MULTI-LAYER RESIST STRUCTURES |
摘要 |
A method for forming on a substrate a multi-layer resist structure having a controlled and pre-determined amount of undercut or overcut according to whether a positive or negative tone resist is used. The amount of undercut or overcut is controlled by means of a predetermined level of pre-exposure of each underlying resist layer prior to deposition of the next resist layer and the final patterning of the top resist layer. The multi-layer resist is then developed to remove resist in a controlled manner from each layer according to the degree of exposure of the resist. Using the technique, multi-layer resist structures having very fine sub-micron details may be formed. Multi-layer positive tone resist structures can be employed as a mask and combined with metal deposition and lift-off techniques for fabricating very high resolution metallic features. |
申请公布号 |
WO2008035059(A2) |
申请公布日期 |
2008.03.27 |
申请号 |
WO2007GB03536 |
申请日期 |
2007.09.19 |
申请人 |
INNOS LIMITED;AFSHAR-HANAEE, NASER |
发明人 |
AFSHAR-HANAEE, NASER |
分类号 |
G03F7/00 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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