发明名称 EXPOSURE AND PATTERNING PROCESS FOR FORMING MULTI-LAYER RESIST STRUCTURES
摘要 A method for forming on a substrate a multi-layer resist structure having a controlled and pre-determined amount of undercut or overcut according to whether a positive or negative tone resist is used. The amount of undercut or overcut is controlled by means of a predetermined level of pre-exposure of each underlying resist layer prior to deposition of the next resist layer and the final patterning of the top resist layer. The multi-layer resist is then developed to remove resist in a controlled manner from each layer according to the degree of exposure of the resist. Using the technique, multi-layer resist structures having very fine sub-micron details may be formed. Multi-layer positive tone resist structures can be employed as a mask and combined with metal deposition and lift-off techniques for fabricating very high resolution metallic features.
申请公布号 WO2008035059(A2) 申请公布日期 2008.03.27
申请号 WO2007GB03536 申请日期 2007.09.19
申请人 INNOS LIMITED;AFSHAR-HANAEE, NASER 发明人 AFSHAR-HANAEE, NASER
分类号 G03F7/00 主分类号 G03F7/00
代理机构 代理人
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