MASK FOR FORMING A THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR SUBSTRATE MANUFACTURED USING THE SAME AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE USING THE SAME

摘要

A mask that is capable of forming a thin-film transistor (TFT) with improved electrical characteristics is presented. The mask includes a drain mask pattern, a source mask pattern and a light-adjusting pattern. The drain mask pattern blocks light for forming a drain electrode. The source mask pattern blocks light for forming a source electrode and faces the drain mask pattern. A distance between the drain and source mask patterns is no more than the resolution of an exposing device. The light-adjusting pattern is formed between end portions of the source mask pattern and the drain mask pattern to block at least some light from entering a space between the source and drain mask patterns.