发明名称 |
Halbleiter-Bildsensor, Kamera und Herstellungsverfahren dafür |
摘要 |
A semiconductor image sensor module and a method for manufacturing thereof as well as a camera and a method for manufacturing thereof are provided in which a semiconductor image sensor chip and an image signal processing chip are connected with a minimum parasitic resistance and parasitic capacity and efficient heat dissipation of the image signal processing chip and shielding of light are simultaneously obtained. A semiconductor image sensor module 1 at least includes a semiconductor image sensor chip 2 having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip 3 for processing image signals formed in the semiconductor image sensor chip 2, wherein a plurality of bump electrodes 15a are formed on a first main surface, a plurality of bump electrodes 15b are formed on the image signal processing chip 3, both the chips 2 and 3 are formed to be laminated through heat dissipating means 4 and the plurality of bump electrodes 15a of the semiconductor image sensor chip 2 and the plurality of bump electrodes 15b on the image signal processing chip 3 are electrically connected. |
申请公布号 |
DE602005004717(D1) |
申请公布日期 |
2008.03.27 |
申请号 |
DE20056004717T |
申请日期 |
2005.10.24 |
申请人 |
SONY CORP. |
发明人 |
YOSHIHARA, IKUO;YAMANAKA, MASAMITSU |
分类号 |
H01L27/146;H01L27/14;H01L31/0203;H04N5/225;H04N5/335;H04N5/357;H04N5/369;H04N5/374;H04N101/00 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|