发明名称 CMOS LINEAR IMAGE SENSOR OPERATING BY CHARGE TRANSFER
摘要 <p>The invention relates to image sensors in the form of a signal-integrating, moving multi-line linear array for the synchronized reading of the same linear image in succession by N lines of P photo-sensitive pixels and the summation, pixel by pixel, of the signals read by the various lines. According to the invention, at the start of a photogenerated-charge integration time, the voltage is applied to the photodiode of the pixel of an intermediate line of rank i, this voltage being the output voltage of a pixel of a previous line of rank i-1, the photodiode is isolated, the charges due to the light are integrated therein and, finally, at the end of integration time, the charges on the photodiode are transferred to a storage node (N2) of the pixel. A charge-voltage conversion circuit (T4, T5) converts the charges on the storage node into a pixel output voltage. Thus, before photogenerated charges are integrated in each pixel, the photodiode receives a charge equivalent to an accumulation of charges coming from the previous pixel lines that observed the same line of the scene.</p>
申请公布号 WO2008034677(A1) 申请公布日期 2008.03.27
申请号 WO2007EP58549 申请日期 2007.08.17
申请人 E2V SEMICONDUCTORS;FEREYRE, PIERRE 发明人 FEREYRE, PIERRE
分类号 H04N5/335;H04N5/374 主分类号 H04N5/335
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