MAGNETORESISTIVE RAM FLOWING INHIBITION CURRENT IN THE SAME DIRECTION AS WRITE CURRENT

摘要

An MRAM(Magnetoresistive Random Access Memory) flowing an inhibition current in the same direction as a write current is provided to reduce the area of the magnetoresistive RAM, by enabling magnetic tunnel junction elements to share one write bit line. An MRAM(Magnetoresistive Random Access Memory) comprises a plurality of magnetic tunnel junction elements(MTJ1-MTJ3), a plurality of read bit lines(BLR1-BLR3) and a plurality of write bit lines(BLW1-BLW3). The plurality of read bit lines is connected to the magnetic tunnel junction elements electrically. The plurality of write bit lines is arranged in turn with the read bit lines. When first data is written into a first magnetic tunnel junction element, a first write current is flowed through a first write bit line arranged at one side of a first read bit line connected to the first magnetic tunnel junction element and a first inhibition current in the same direction of the first write current is flowed through a second write bit line arranged at the opposite side to the first read bit line by intervening the first write bit line.