SEMICONDUCTOR DEVICE STRUCTURE AND ITS MANUFACTURE METHOD

摘要

A semiconductor device structure is provided to vary the physical and electrical characteristics of a semiconductor layer by additionally applying compressive stress or tensile stress from the outside. A bipolar semiconductor device of a heterojunction structure includes an emitter(211), an intrinsic base(212), a collector(213) and an insulation layer sidewall. A base for applying stress is selectively and epitaxially grown to apply local stress to the semiconductor device. The base can have a (311) slope(218) by a self-aligned epitaxial growth method. The semiconductor device structure can include an insulation layer(215) for applying stress that additionally applies local stress to the semiconductor device.