| 摘要 |
The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiCl 4 is converted to Si metal by contacting gaseous SiCl 4 with liquid Zn, thereby obtaining a Si-bearing alloy and Zn-chloride, which is separated. The Si-bearing alloy is then purified by heating it at a temperature above the melting point of Si and by injecting Cl 2 and/or a gaseous Si chloride into the melt. This process does not require complicated technologies and preserves the high purity of the SiCl 4 towards the end product. The only other reactant is Zn, which can be obtained in very high purity grades, and which can be recycled after electrolysis of the Zn-chloride.
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