METHOD FOR MANUFACTRUING THIN FILM TRANSISTOR SUBSTRATE

摘要

A method for manufacturing a substrate for a thin film transistor is provided to simplify a manufacturing process by forming a recessed pattern and a drain contact hole on an organic capping layer through performing an exposure and developing processes once. A thin film transistor(130) is formed on a substrate(100), and then a passivation layer(140) and an organic capping layer(150) are formed on the substrate. A groove for contact hole and a recessed pattern(153) having a depth shallower than that of the groove are formed on the organic capping layer. A bottom surface of the groove and the passivation layer under the bottom surface are removed to form a drain contact hole(162) for exposing a portion of a drain electrode(132) of the thin film transistor. A pixel electrode(170) and a reflective layer(180) are formed on the organic capping layer.