发明名称 Semiconductor laser diode with advanced window structure
摘要 The invention relates to a semiconductor laser diode structure with increased catastrophic optical damage (COD) power limit, featuring three sections, sometimes called windows, at the output facet of the diode. These include an optically transparent section (53), a current blocking section (54) and a partially current blocking section (55).
申请公布号 EP1903646(A2) 申请公布日期 2008.03.26
申请号 EP20070253681 申请日期 2007.09.18
申请人 JDS UNIPHASE CORPORATION 发明人 PETERS, MATTHEW GLENN;ROSSIN, VICTOR;ZUCKER, ERIK PAUL
分类号 H01S5/16;H01S5/028;H01S5/042 主分类号 H01S5/16
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