发明名称 |
Semiconductor laser diode with advanced window structure |
摘要 |
The invention relates to a semiconductor laser diode structure with increased catastrophic optical damage (COD) power limit, featuring three sections, sometimes called windows, at the output facet of the diode. These include an optically transparent section (53), a current blocking section (54) and a partially current blocking section (55).
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申请公布号 |
EP1903646(A2) |
申请公布日期 |
2008.03.26 |
申请号 |
EP20070253681 |
申请日期 |
2007.09.18 |
申请人 |
JDS UNIPHASE CORPORATION |
发明人 |
PETERS, MATTHEW GLENN;ROSSIN, VICTOR;ZUCKER, ERIK PAUL |
分类号 |
H01S5/16;H01S5/028;H01S5/042 |
主分类号 |
H01S5/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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