| 摘要 |
<p>A method for manufacturing a flash device is provided to make a highly-integrated semiconductor by stacking semiconductor devices to fabricate a flash memory device. A first memory cell array is formed on a first semiconductor substrates(10). An interlayer dielectric(19) is formed on the entire surface of the first semiconductor substrate. A second memory cell array is formed on a second semiconductor substrate(20). An interlayer dielectric(29) is formed on the entire surface of the second semiconductor substrate. The second semiconductor substrate is bonded to the first semiconductor substrate. Predetermined portions of the second and first semiconductor substrates are etched to bury a metal interconnection(30), thereby electrically connecting the first and second memory cell arrays.</p> |
