| 摘要 |
<p>A magnetron type sputtering device and a method for manufacturing a semiconductor device are provided to prevent pressure destruction by reducing local storage of electrons in a gate insulating layer. A target and a substrate holder are oppositely placed in a vacuum chamber. A magnetron(11) is placed at the target opposite to the substrate holder. The magnetron is rotated around an axis perpendicular to the target by a rotating mechanism. The magnetron has an inner sector magnet(12) and an outer sector magnet(13) which have different polarity and same width. A gap between circular arc portions(12b,12c) of the inner and outer sector magnets is set by a distance so that a horizontal magnetic field is 500 Gauss or more. A gap between straight portions(13b,13c) of the inner and outer sector magnets is set in a distance longer than that of the gap between the circular arc portions.</p> |
