| 摘要 |
A semiconductor device is provided to improve the yield and reliability of the semiconductor device by suppressing damage of an element even though stress is applied to the device. A semiconductor layer(106) is formed on a substrate, and has a channel formation region and an impurity region(106b). A first conductive layer(110) is formed on the channel formation region, in which a gate insulating layer is interposed between the first conductive layer and the channel formation region. A first interlayer dielectric is formed to cover the first conductive layer. A second conductive layer(114) is formed on the first interlayer dielectric to overlap with at least part of the impurity region. A second interlayer dielectric is formed on the second conductive layer. A third conductive layer is formed on the second interlayer dielectric. The third conductive layer is electrically connected to the impurity region through an opening formed in the first interlayer dielectric and the second interlayer dielectric. |
