Tunnel magnetoresistive sensor in which at least part of pinned layer is composed of CoFeB layer and method for manufacturing the tunnel magnetoresistive sensor

摘要

A tunnel magnetoresistive sensor includes a pinned magnetic layer (4), an insulating barrier layer (5) formed of Mg-O, and a free magnetic layer (6). A barrier-layer-side magnetic sublayer (4c) constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region (4c1) formed of CoFeB or FeB and a second magnetic region (4c2) formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.