Image conversion panel and associated methods

摘要

A method for infrared (IR) imaging using a panel made of integrated GaAs quantum well infrared photodetector (QWIP) and near-infrared (NIR) or visible light emitting diode (LED). The panel is a large area diode with an optical window for top illumination or without the window for backside illumination. The integrated device acts as a photon energy up-converter which converts infrared light of wavelength longer than about 1.1 mu m to near infrared or visible light which falls into the silicon detector spectral range. Using this device, an IR image is up-converted and the resulting NIR or visible image is then detected by an off-the-shelf silicon charge-coupled-device (CCD) camera. The image detected on the CCD camera represents the original infrared image. A specific device embodiment for converting 9 mu m IR to 870 nm NIR is given. Using this up-conversion scheme a multicolor or multispectral version is easily realized, which provides the capability of simultaneously imaging in several infrared wavelength regions. The imaging panel can also be used with other forms of photodetectors.