| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and method for plasma treatment by which the occurrence of failures can be prevented by making a plate-shaped substrate to be held appropriately on a substrate placing section. SOLUTION: In the method for plasma treatment, a silicon wafer is plasma- treated by placing the wafer on a placing surface on an insulating layer 5 formed on a lower electrode 3 in a processing chamber 2. Before plasma is generated between the lower electrode 3 and an upper electrode 4, the silicon wafer is held by the insulating layer 5 by vacuum suction by driving a vacuum suction pump 12 and, after the plasma is generated, the wafer is held by the lower electrode 3 by electrostatic attraction by impressing a DC voltage upon the electrode 3 from a DC power source section 18 for electrostatic attraction. Consequently, the silicon wafer can be held appropriately by the lower electrode 3 and the occurrence of abnormal discharge or defective cooling caused by defective adhesion can be prevented. COPYRIGHT: (C)2004,JPO |
