| 摘要 |
<p>A method for manufacturing a flash memory device is provided to control an effective field oxide layer height by lowering a height of a center portion of an isolation layer relative to a cell active region. A semiconductor substrate(400) having an isolation layer(440) formed in an isolation layer, and a tunnel oxide layer(410) and a first conducting layer(420) formed in an active region is prepared. The upper portion of the isolation layer is etched to expose a portion of the sidewall of the first conducting layer. An oxide layer is formed on the entire surface of the substrate, and then is etched through an etch-back process. At that time, the etch-back process is excessively performed to etch the isolation layer, thereby lowering a height of a center portion of the isolation layer. A dielectric layer(460) and a second conducting layer(470) are formed on the entire surface of the substrate.</p> |
