| 摘要 |
A fuse box of a semiconductor device and a forming method thereof are provided to prevent a contact plug from penetrating the fuse pattern by forming the contact plug in a groove. A lower structure having a first interlayer dielectric(32) is formed on a semiconductor substrate(31), and a second interlayer dielectric(34) is formed on the first interlayer dielectric and is provided with a groove. A T-shaped fuse pattern(36) is formed in the groove and on the second interlayer dielectric adjacent to the groove. A third interlayer dielectric(37) is formed on the second interlayer dielectric to cover the fuse pattern. A metal interconnection(39) is formed on the third interlayer dielectric to contact the fuse pattern. A spacer(35) is formed on a sidewall of the groove.
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