| 摘要 |
<p>A method for manufacturing a flash memory device is provided to improve the reliability of the device by not occurring data retention failures of the device during a high temperature operating life testing process. A floating gate is formed on a tunnel oxide layer formed on a semiconductor substrate(S201), and an ONO(Oxide Nitride Oxide) layer is formed on the floating gate(S202). The semiconductor substrate is subjected to a well implant process to form a well on the semiconductor substrate(S204). The semiconductor substrate is subjected to an ashing process and a cleaning process(S205). The photoresist pattern is a KrF photoresist pattern which is patterned using photoresist for KrF.</p> |
