METHOD OF FABRICATING NONVOLATILE MEMORY DEVICE

摘要

A method for manufacturing a non-volatile memory device is provided to uniformly form a tunneling insulating layer by evenly forming a side profile of a floating gate. An insulating layer and a conducting layer for a floating gate are deposited on a semiconductor substrate(100), and then are patterned to form a gate insulating layer(210) and a floating gate(220). A spacer(310) is formed on one side of the floating gate, and the substrate is subjected to an oxidation process to form an integrated insulating layer(230), and then the spacer is removed. The substrate is subjected to an oxidation process to form a tunneling insulating layer on the substrate and at one side of the floating gate. A control gate is formed on the floating gate, a source region is formed at one side of the floating gate, and then a drain region is formed at one side of the control gate.