发明名称 |
Method of growing non-polar a-plane gallium nitride |
摘要 |
The invention provides a method of growing a non-polar a-plane gallium nitride. In the method, first, an r-plane substrate is prepared. Then, a low-temperature nitride-based nucleation layer is deposited on the substrate. Finally, the non-polar a-plane gallium nitride is grown on the nucleation layer. In growing the non-polar a-plane gallium nitride, a gallium source is supplied at a flow rate of about 190 to 390 mumol/min and the flow rate of a nitrogen source is set to produce a V/III ratio of about 770 to 2310.
|
申请公布号 |
US7348200(B2) |
申请公布日期 |
2008.03.25 |
申请号 |
US20060368184 |
申请日期 |
2006.03.03 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO. LTD.;THE UNIVERSITY OF TOKUSHIMA |
发明人 |
LEE SOO MIN;CHOI RAK JUN;YOSHIKI NAOI;SHIRO SAKAI;KOIKE MASAYOSHI |
分类号 |
H01L21/00;C23C16/34;C30B25/14;C30B29/38;H01L21/20;H01L21/205 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|