Semiconductor light-emitting device and method for fabricating the device

摘要

An n-type AlAs/n-type Al_0.5Ga_0.5As DBR layer and a p-type (Al_0.2Ga_0.8)_0.5In_0.5P/p-type Al_0.5In_0.5P DBR layer are formed on an n-type GaAs substrate at specified intervals so that a reflection spectrum is centered at 650 nm and the resonance wavelength becomes 650 nm. A quantum well active layer (light-emitting layer) is formed so that the light emission peak wavelength becomes 650 nm in the belly position of the standing wave generated in a resonator constructed of both the DBR layers. A grating pattern is formed on the surface of a p-type Al_0.5Ga_0.5As light diffusion layer that serves as a light-emitting surface surrounded by a p-type electrode. By thus roughening the light-emitting surface, light emitted from the light-emitting layer is diffused in various directions, reducing the radiation angle dependency of the emission light wavelength.