发明名称 Switch element, memory element and magnetoresistive effect element
摘要 A switch element includes a substrate; a plurality of carbon nanotubes provided upright on the substrate; magnetic particles arranged at tip ends of the carbon nanotubes respectively; and a plurality of conductive layers formed between base ends of the carbon nanotubes and the substrate. A switching operation of the switching element is performed in such a manner that the carbon nanotubes or the magnetic particles are brought into contact with each other according to an electrical potential between the conductive layers, and the carbon nanotubes are separated from each other when an electrical current flows through the carbon nanotubes with the carbon nanotubes or the magnetic particles brought into contact with each other.
申请公布号 US7348591(B2) 申请公布日期 2008.03.25
申请号 US20060502432 申请日期 2006.08.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 YAMAUCHI TAKASHI;TANAKA CHIKA;SUGIYAMA HIDEYUKI;KINOSHITA ATSUHIRO;KOGA JUNJI;MOTOI YUICHI;NAKANO YOSHIHIKO;SUENAGA SEIICHI
分类号 H01L29/06 主分类号 H01L29/06
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