| 摘要 |
<p>A semiconductor device and a fabricating method thereof are provided to prevent a silicon nitride layer from flowing between gate electrodes by forming a silicon oxide layer between the gate electrodes. Gate electrodes(SG) of plural memory cell transistors are formed on an upper surface of a semiconductor substrate. A first silicon oxide layer(9) fills the gap between the gate electrodes. The upper layer is removed from the first silicon oxide layer to expose the semiconductor layer. A metal layer is deposited on the semiconductor layer of the gate electrode to form a metal semiconductor alloy layer, and the remaining metal layer which is not used as the alloy layer is removed. A second silicon oxide layer(10) is formed on and between the gate electrodes, and then a silicon nitride layer(11) is formed on the second silicon oxide layer.</p> |
