FLASH MEMORY DEVICE USING DOUBLE PATTERNING TECHNOLOGY AND METHOD OF THE SAME

摘要

A flash memory device using double patterning technology and a method thereof are provided to ensure a distance between patterns by implementing macro patterns using the double patterning technology. A flash memory device includes a string selection line(SSL), a ground selection line(GSL), and a string(100a) having odd numbered word lines(WL1-WL33). The odd numbered word lines are formed between the string and ground selection lines. The width of the word lines wider than a distance between the word lines is formed. One of the word lines is not utilized to store information. The word line not utilized to store the information is formed adjacent to the ground selection line.