摘要 |
A highly integrated magnetic memory with low power consumption is provided. A first element portion which has a free layer, a first pinned layer formed in the film thickness direction of the free layer, and an insulation barrier layer formed between the free layer and the first pinned layer, and a second element portion which has the aforementioned free layer, a second pinned layer formed in the film surface direction of the free layer, and a non-magnetic layer formed between the free layer and the second pinned layer are provided. A current I<SUB>W </SUB>flows in the film surface direction of the second element portion for writing the magnetic information and a current I<SUB>R </SUB>flows in the film thickness direction of the first element portion for reading the magnetic information.
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