| 摘要 |
A TMR head capable of reconciling high output with high band width is implemented. To that end, two multilayered films each comprised of an insulating layer and a ferromagnetic layer are formed at different locations on an electrode layer, and a current is caused to flow from the ferromagnetic layer of a first multilayered film to the electrode layer while polarized spin is diffused up to a portion of the electrode layer, directly underneath the other multilayered film comprised of the insulating layer and the ferromagnetic layer, thereby detecting a change in resistance, according to a change in the magnetization direction of the ferromagnetic layer of a second multilayered film by use of a circuit extremely large in input impedance, such as a FET.
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