| 摘要 |
First and second anti-fuse elements are provided for storing 1-bit data. A program voltage generating circuit generates a programming voltage and applies it to the first and second anti-fuse elements. A read voltage generating circuit generates a readout voltage and applies it to the first and second anti-fuse elements. First and second transistors are inserted between the first and second anti-fuse elements and a ground potential node, and are respectively turned on by first and second select signals during the programming period. A switch element is connected between the first and the second transistors. The switch element is turned off during the programming period, and turned on during the readout period. A sense amplifier is connected to the switch element in order to sense the data read out from the first and the second anti-fuse elements.
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