发明名称 Voltage supplier of semiconductor memory device
摘要 The present invention provides voltage supplier for supplying an internal voltage with optimized drivability required for internal operation. The voltage supplier of a semiconductor memory device includes: an internal voltage detection means for detecting a voltage level of an internal voltage; a clock oscillation means for outputting a charge pumping clock signal; an internal voltage control means for controlling the clock oscillation means to be performed selectively in accordance with a data access mode or a non-data access mode; and a charge pumping means for outputting the internal voltage required for internal operation by pumping charges in response to the charge pumping clock signal.
申请公布号 US7348828(B2) 申请公布日期 2008.03.25
申请号 US20040016712 申请日期 2004.12.21
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 LEE KANG-SEOL;LEE JAE-JIN
分类号 G05F1/10;G11C5/14;H03K3/38 主分类号 G05F1/10
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