发明名称 |
Voltage supplier of semiconductor memory device |
摘要 |
The present invention provides voltage supplier for supplying an internal voltage with optimized drivability required for internal operation. The voltage supplier of a semiconductor memory device includes: an internal voltage detection means for detecting a voltage level of an internal voltage; a clock oscillation means for outputting a charge pumping clock signal; an internal voltage control means for controlling the clock oscillation means to be performed selectively in accordance with a data access mode or a non-data access mode; and a charge pumping means for outputting the internal voltage required for internal operation by pumping charges in response to the charge pumping clock signal.
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申请公布号 |
US7348828(B2) |
申请公布日期 |
2008.03.25 |
申请号 |
US20040016712 |
申请日期 |
2004.12.21 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
LEE KANG-SEOL;LEE JAE-JIN |
分类号 |
G05F1/10;G11C5/14;H03K3/38 |
主分类号 |
G05F1/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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