发明名称 |
Multiple layer and crystal plane orientation semiconductor substrate |
摘要 |
A semiconductor on insulator substrate and a method of fabricating the substrate. The substrate including: a first crystalline semiconductor layer and a second crystalline semiconductor layer; and an insulating layer bonding a bottom surface of the first crystalline semiconductor layer to a top surface of the second crystalline semiconductor layer, a first crystal direction of the first crystalline semiconductor layer aligned relative to a second crystal direction of the second crystalline semiconductor layer, the first crystal direction different from the second crystal direction.
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申请公布号 |
US7348610(B2) |
申请公布日期 |
2008.03.25 |
申请号 |
US20050906557 |
申请日期 |
2005.02.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA TOSHIHARU;HORAK DAVID V.;KOBURGER, III CHARLES W.;SHI, III LEATHEN |
分类号 |
H01L27/10 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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