发明名称 Multiple layer and crystal plane orientation semiconductor substrate
摘要 A semiconductor on insulator substrate and a method of fabricating the substrate. The substrate including: a first crystalline semiconductor layer and a second crystalline semiconductor layer; and an insulating layer bonding a bottom surface of the first crystalline semiconductor layer to a top surface of the second crystalline semiconductor layer, a first crystal direction of the first crystalline semiconductor layer aligned relative to a second crystal direction of the second crystalline semiconductor layer, the first crystal direction different from the second crystal direction.
申请公布号 US7348610(B2) 申请公布日期 2008.03.25
申请号 US20050906557 申请日期 2005.02.24
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FURUKAWA TOSHIHARU;HORAK DAVID V.;KOBURGER, III CHARLES W.;SHI, III LEATHEN
分类号 H01L27/10 主分类号 H01L27/10
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