发明名称 |
Method for improving a semiconductor substrate having SiGe film and semiconductor device manufactured by using this method |
摘要 |
A method of improving a semiconductor substrate including a SiGe film on a Si or SOI substrate is provided. The method includes determining a relationship between a film condition of the SiGe film and a hydrogen ion implantation condition used in making the SiGe film so as to achieve relaxation of lattice distortion in the SiGe film as well as improved crystallinity and/or surface condition of the SiGe film, so that improved conditions for improving quality of the SiGe film on the Si or SOI substrate can be determined.
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申请公布号 |
US7348186(B2) |
申请公布日期 |
2008.03.25 |
申请号 |
US20030639647 |
申请日期 |
2003.08.13 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YOSHIDA AKIRA;BABA TOMOYA |
分类号 |
H01L21/205;H01L21/66;H01L21/20;H01L21/265;H01L29/10;H01L29/78;H01L29/786 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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