发明名称 |
Multilayer silicon over insulator device |
摘要 |
An apparatus and method for a multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device is different than the active region of at least another device. Where the multilayer SOI device has a first layer including a PMOS device with a silicon active region having a crystal orientation of [100], the second layer may be an NMOS device with a active region having a silicon layer having a crystal orientation of [110]. The second layer is bonded to the first layer. The method and apparatus can be extended to more than two layers thus forming a multilayer SOI device having a different crystal orientation at each layer. The multiple layer SOI device may form circuits of reduced surface area.
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申请公布号 |
US7348658(B2) |
申请公布日期 |
2008.03.25 |
申请号 |
US20040711167 |
申请日期 |
2004.08.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MOUSA MAHMOUD A.;PUTNAM CHRISTOPHER S. |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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