发明名称 Fabrication process of semiconductor device and polishing method
摘要 A method of fabricating a semiconductor device includes a polishing process of a substrate, wherein the polishing process includes the steps of applying a chemical mechanical polishing process to the substrate on a polishing pad while using slurry, and conditions a surface of the polishing pad, the conditioning step including the step of grinding the surface of said polishing pad by at least first and second conditioning disks of respective, different surface states.
申请公布号 US7348276(B2) 申请公布日期 2008.03.25
申请号 US20050186808 申请日期 2005.07.22
申请人 FUJITSU, LIMITED 发明人 SHIRASU TETSUYA
分类号 H01L21/306;B24B37/04 主分类号 H01L21/306
代理机构 代理人
主权项
地址