Reticle, semiconductor exposure apparatus and method, and semiconductor device manufacturing method

摘要

The invention disclosed herein concerns technology that ensures, in a projection exposure process using a transmission type reticle, exposure with an even finish size throughout the entire exposure region, without adverse influence of external disturbance light such as back-surface reflection, for example. Specifically, the invention provides a reticle, a semiconductor exposure apparatus and method, and a semiconductor device manufacturing method, wherein a reticle used there includes a pattern region in which a circuit pattern is formed, a light blocking region of a width d formed at an outside periphery of the pattern region, and an anti-reflection film formed on a surface of the reticle remote from the pattern region, wherein the width d of the light blocking film satisfies a relation $d<=2t.\tan \left\{{\sin }^{-1}\left(\frac{n_1}{n_2}\sin \mathrm{theta}\right)\right\}$ where n 1 is a refractive index of a medium at a light entrance side of the reticle, n 2 is a refractive index of the reticle, t is a thickness of the reticle, and theta is an incidence angle of light upon the reticle.