发明名称 Electromechanical memory cell with torsional movement
摘要 A memory cell uses a pair of cantilevers to store a bit of information. Changing the relative position of the cantilevers determines whether they are electrically conducting or not. The on and off state of this mechanical latch is switched by using, for example, electrostatic, electromagnetic or thermal forces applied sequentially on the two cantilevers to change their relative position. The amount of power required to change the state of the cell is reduced by supporting at least one of the cantilevers with at least one lateral projection that is placed in torsion during cantilever displacement. After a bit of data is written, the cantilevers are locked by mechanical forces inherent in the cantilevers and will not change state unless a sequential electrical writing signal is applied. The sequential nature of the required writing signal makes inadvertent, radiation or noise related data corruption unlikely.
申请公布号 US7349236(B2) 申请公布日期 2008.03.25
申请号 US20050166297 申请日期 2005.06.24
申请人 XEROX CORPORATION 发明人 LIN PINYEN;CHEN JINGKUANG;MA JUN
分类号 G11C11/00 主分类号 G11C11/00
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